STP22NE03 datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STP22NE03

功能描述	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP22NE03L

N - CHANNEL ENHANCEMENT MODE

" SINGLE FEATURE SIZE

™ " POWER MOSFET

s

TYPICAL RDS(on) = 0.034

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

™ "

strip-based

process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

INTERNAL SCHEMATIC DIAGRAM

January 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

30

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (continuous) at Tc = 25

o C22

A

ID

Drain Current (continuous) at Tc = 100

oC16

A

IDM(

•)

Drain Current (pulsed)

88

A

Ptot

Total Dissipation at Tc = 25

oC60

W

Derating Factor

0.4

W/

oC

dv/dt

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP22NE03L

30 V

< 0.05

Ω

22 A

TO-220

1

2

3

1/5

类似零件编号 - STP22NE03

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP22NE03L	371Kb / 2P	isc N-Channel MOSFET Transistor

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