STP22NE10L datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STP22NE10L

功能描述	N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP22NE10L

N - CHANNEL 100V - 0.07

Ω - 22A TO-220

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.07

Ω

s

LOW THRESHOLD DRIVE

s

LOGIC LEVEL DEVICE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STP22NE10L

100 V

< 0.085

Ω

22 A

November 1999

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC22

A

ID

Drain Current (continuous) at Tc = 100

oC14

A

IDM(

•)

Drain Current (pulsed)

88

A

Ptot

T otal Dissipation at Tc =25

oC90

W

Derating Factor

0.6

W /

oC

EAS (1)

Single Pulse Avalanche Energy

250

mJ

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 1

) starting Tj =25 oC, ID =22A , VDD = 50V

1/8

类似零件编号 - STP22NE10L

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP22NE10L	371Kb / 2P	isc N-Channel MOSFET Transistor

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