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STP24NF10 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP24NF10
功能描述  N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP24NF10 数据表(HTML) 2 Page - STMicroelectronics

  STP24NF10 Datasheet HTML 1Page - STMicroelectronics STP24NF10 Datasheet HTML 2Page - STMicroelectronics STP24NF10 Datasheet HTML 3Page - STMicroelectronics STP24NF10 Datasheet HTML 4Page - STMicroelectronics STP24NF10 Datasheet HTML 5Page - STMicroelectronics STP24NF10 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1.87
62.5
300
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
100
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V
ID = 12 A
0.07
0.077
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
24
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =12 A
20
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
870
125
52
pF
pF
pF
STP24NF10
2/6



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