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TYNX12RG 数据表(PDF) 5 Page - STMicroelectronics

部件名 TYNX12RG
功能描述  Sensitive and Standard 12 A SCRS
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TYNX12RG 数据表(HTML) 5 Page - STMicroelectronics

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TN12, TS12 and TYNx12 Series
Characteristics
5/12
Figure 9.
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values) for TS12 series
Figure 10.
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for TS12 series
0
200
400
600
800
1000
1200
0.1
1.0
10.0
R(k )
GK
Ω
dV/dt[R
] / dV/dt[
=220 ]
GK
Ω
RGK
Tj = 125°C
V = 0.67 x V
D
DRM
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
C
(nF)
GK
dV/dt[C
] / dV/dt[
=220 ]
GK
Ω
RGK
T
V = 0.67 x V
= 125°C
R
= 220
D
DRM
GK
j
Ω
Figure 11.
Surge peak on-state current versus
number of cycles
Figure 12.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I²t
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
I
(A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =105°C
C
TS12
TN12 / TYN12
t =10ms
p
One cycle
0.01
0.10
1.00
10.00
10
100
1000
2000
I
(A), I t (A s)
TSM
22
t (ms)
p
I t
2
ITSM
T initial = 25°C
j
TS12
TS12
TN12 / TYN12
TN12 / TYN12
dI/dt limitation
Figure 13.
On-state characteristics (maximum
values)
Figure 14.
Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed circuit
board FR4, copper thickness:
35 µm) (DPAK and D2PAK)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
I
(A)
TM
V
(V)
TM
Tj=max
T =25°C
j
V =0.85V
R =30m
T max.:
j
t0
d
Ω
0
2
4
6
8
101214161820
0
20
40
60
80
100
S(cm²)
R
(°C/W)
th(j-a)
DPAK
DPAK
2



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