TS2012 datasheet(9/30 Pages) STMICROELECTRONICS

9 / 30 page

TS2012

Electrical characteristics

9/30

Table 6.

VCC = +3.6V, GND = 0V, Vic=1.8V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load, both channels

3.3

6.5

ISTBY

Standby current

No input signal, VSTBY = GND

0.2

µA

Voo

Output offset voltage

Floating inputs, G = 6dB, RL = 8Ω

Output power

THD + N = 1% max, f = 1kHz, RL = 4Ω

THD + N = 1% max, f = 1kHz, RL = 8Ω

THD + N = 10% max, f = 1kHz, RL = 4Ω

THD + N = 10% max, f = 1kHz, RL = 8Ω

1.15

0.68

1.3

0.9

THD + N

Total harmonic distortion + noise

Po = 0.4W, G = 6dB, f =1kHz, RL = 8Ω

0.05

Efficiency

Efficiency per channel

Po = 1.15W, RL = 4Ω +15µH

Po = 0.68W, RL = 8Ω+15µH

PSRR

Power supply rejection ratio with inputs grounded

Cin=1µF

(1),f = 217Hz, R

L = 8Ω, Gain=6dB,

Vripple = 200mVpp

Crosstalk

Channel separation

Po = 0.5W, G = 6dB, f =1kHz, RL = 8Ω

CMRR

Common mode rejection ratio

Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,

ΔVICM = 200mVpp

Gain

Gain value

G1 = G0 = VIL

G1 = VIL & G0 = VIH

G1 = VIH & G0 = VIL

G1 = G0 = VIH

5.5

11.5

17.5

23.5

6.5

12.5

18.5

24.5

Zin

Single ended input impedance

All gains, referred to ground

FPWM

Pulse width modulator base frequency

190

280

370

kHz

SNR

Signal to noise ratio (A-weighting)

Po = 0.65W, G = 6dB, RL = 8Ω

tWU

Wake-up time

tSTBY

Standby time

TS2012 数据表(PDF) 9 Page - STMicroelectronics

TS2012 数据表(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

数据表下载