T820W / T830W

4/5

10

100

1000

0.01

0.10

1.00

10.00

tp(ms)

Tj initial=25°C

dI/dt limitation:

50A/µs

ITSM

I²t

ITSM(A), I t (A s)

22

Fig. 6: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and

corresponding value of I

0

10

20

30

40

50

60

70

80

90

1

10

100

1000

Number of cycles

Non repetitive

Tj initial=25°C

Repetitive

Tc=105°C

t=20ms

ITSM(A)

Fig. 5: Surge peak on-state current versus number

of cycles.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

0

10

20 30

40

50

60 70

80

90 100 110 120 130

Tj(°C)

IGT

IH & IL

IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C]

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus junc-

tion temperature (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

dV/dt (V/µs)

(dI/dt)c [(dV/dt)c / Specified (dI/dt)c

Fig. 8: Relative variation of critical rate of decrease

of main current versus reapplied dV/dt (typical val-

ues).

0

1

2

3

4

5

6

7

8

0

25

50

75

100

125

Tj(°C)

(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]

Fig. 9: Relative variation of critical rate of decrease

of main current versus junction temperature.