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STP2NC60FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP2NC60FP
功能描述  N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh™ I MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP2NC60FP 数据表(HTML) 3 Page - STMicroelectronics

  STP2NC60FP Datasheet HTML 1Page - STMicroelectronics STP2NC60FP Datasheet HTML 2Page - STMicroelectronics STP2NC60FP Datasheet HTML 3Page - STMicroelectronics STP2NC60FP Datasheet HTML 4Page - STMicroelectronics STP2NC60FP Datasheet HTML 5Page - STMicroelectronics STP2NC60FP Datasheet HTML 6Page - STMicroelectronics STP2NC60FP Datasheet HTML 7Page - STMicroelectronics STP2NC60FP Datasheet HTML 8Page - STMicroelectronics STP2NC60FP Datasheet HTML 9Page - STMicroelectronics  
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STP2NC60/STP2NC60FP
Safe Operating Area for TO-220
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300V, ID = 0.7 A
RG =4.7Ω VGS = 10V
(see test circuit, Figure 3)
8ns
tr
Rise Time
8
ns
Qg
Total Gate Charge
VDD = 480V, ID = 1.4 A,
VGS = 10V
8.5
11.5
nC
Qgs
Gate-Source Charge
2.8
nC
Qgd
Gate-Drain Charge
2.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 1.4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
25
ns
tf
Fall Time
9
ns
tc
Cross-over Time
34
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
1.9
A
ISDM (2)
Source-drain Current (pulsed)
7.4
A
VSD (1)
Forward On Voltage
ISD = 1.4 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 1.4 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
500
ns
Qrr
Reverse Recovery Charge
950
nC
IRRM
Reverse Recovery Current
3.8
A
Safe Operating Area for TO-220FP



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