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STP3020L 数据表(PDF) 2 Page - STMicroelectronics |
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STP3020L 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() THERMAL DATA Rthj-case Rthj -amb Rthc-sink T l Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 1.875 62.5 0.5 300 oC/W oC/W oC/W oC ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS =0 30 V IDSS Zero Gat e Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating Tc =125 oC 1 10 µA µA IGSS Gat e-body Leakage Current (VDS =0) VGS = ± 20 V ± 100 nA ON ( ∗) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit VGS(th) Gat e Threshold Voltage VDS =VGS ID = 250 µA1 2. 5 V RDS(on) Static Drain-source On Resistance VGS =10V ID =20 A VGS =5V ID =20 A 0.019 0.033 0.022 0.038 Ω Ω ID(o n) On State Drain Current VDS >ID(o n) xRDS(on )max VGS =10 V 40 A DYNAMIC Symbo l Parameter Test Con ditions Min. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(o n) xRDS(on )max ID =20 A 5 20 S Ciss Cos s Crss Input Capacitance Out put Capacitance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS = 0 1270 350 115 pF pF pF STP3020L 2/8 |
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