STP30NE06LFP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP30NE06LFP

功能描述	N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP30NE06L

STP30NE06LFP

N - CHANNEL 60V - 0.035

Ω - 30A - TO-220/TO-220FP

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.035

Ω

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

ST P30NE06L

STP30NE06L FP

VDS

Drain-source Voltage (VGS =0)

60

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)60

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC30

17

A

ID

Drain Current (continuous) at Tc = 100

oC21

12

A

IDM(

•)

Drain Current (pulsed)

120

68

A

Ptot

T otal Dissipation at Tc =25

oC80

30

W

Derating Factor

0.53

0.2

W/

oC

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. O perat ing Junct ion T emperature

175

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP30NE06L

STP30NE06LF P

60 V

<0.05

Ω

<0.05

Ω

30 A

17 A

March 1999

TO-220

TO-220FP

1

2

3

1

2

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