STP35NF10 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP35NF10

功能描述	N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET??POWER MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 10 page

1/10

April 2003

STP35NF10

STB35NF10

N-CHANNEL 100V - 0.030

Ω -40A TO-220 / D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

(1) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(2) Starting Tj = 25°C, ID = 20A, VDD =80V

s

TYPICAL RDS(on) = 0.030Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet series realized with STMicro-

electronics unique STripFET process has specifical-

ly been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters for Telecom and Computer application. It

is also intended for any application with low gate

charge drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP35NF10

STB35NF10

100 V

< 0.035

Ω

< 0.035

Ω

40 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

100

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

100

V

VGS

Gate- source Voltage

±20

V

ID

Drain Current (continuous) at TC = 25°C

40

A

ID

Drain Current (continuous) at TC = 100°C

28

A

IDM ( )

Drain Current (pulsed)

160

A

PTOT

Total Dissipation at TC = 25°C

115

W

Derating Factor

0.77

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

13

V/ns

EAS (2)

Single Pulse Avalanche Energy

300

mJ

Tstg

Storage Temperature

–55 to175

°C

Tj

Operating Junction Temperature

TO-220

1

2

3

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STP35NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STP35NF10	427Kb / 14P	N-channel 100V - 0.030廓 - 40A - D2PAK/TO-220 Low gate charge STripFET??II Power MOSFET 26-Jun-2006
VBsemi Electronics Co.,...	STP35NF10	951Kb / 7P	N-Channel 100-V (D-S) MOSFET
Inchange Semiconductor ...	STP35NF10	371Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP35NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STB40NF10L	435Kb / 9P	N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET Apr-2001
	STP24NF10	48Kb / 6P	N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET Apr-2000
	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET Sep-2002
	STP40NF10L	272Kb / 8P	N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET Jun-2002
	STP40N20	348Kb / 13P	N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET 03-Jun-2005
	STB80NF10	317Kb / 14P	N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET 25-Jan-2007
	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
	STB35NF10	427Kb / 14P	N-channel 100V - 0.030廓 - 40A - D2PAK/TO-220 Low gate charge STripFET??II Power MOSFET 26-Jun-2006
	STD25NF10LT4	432Kb / 13P	N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET 03-Jun-2006
	STF40N20	507Kb / 18P	N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET 16-Aug-2006

More results

STP35NF10 数据表(PDF) 1 Page - STMicroelectronics

STP35NF10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP35NF10

类似说明 - STP35NF10

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载

链接网址

STP35NF10 数据表(PDF) 1 Page - STMicroelectronics

STP35NF10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP35NF10

类似说明 - STP35NF10

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表 下载

链接网址

数据表下载