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STB35NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB35NF10
功能描述  N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET??POWER MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB35NF10 数据表(HTML) 3 Page - STMicroelectronics

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STP35NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =50V, ID = 17.5 A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
17
ns
tr
Rise Time
60
ns
Qg
Total Gate Charge
VDD =80V, ID =35A,VGS = 10V
55
nC
Qgs
Gate-Source Charge
12
nC
Qgd
Gate-Drain Charge
20
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 50V, ID =17.5A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
60
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
40
A
ISDM (2)
Source-drain Current (pulsed)
160
A
VSD (1)
Forward On Voltage
ISD =35A,VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 35 A, di/dt = 100A/µs,
VDD =25V, Tj = 150°C
(see test circuit, Figure 5)
160
720
9
ns
nC
A
Thermal Impedence
Safe Operating Area



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