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STP36NF03L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP36NF03L
功能描述  N-CHANNEL 30V - 0.015 ohm - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP36NF03L 数据表(HTML) 3 Page - STMicroelectronics

  STP36NF03L Datasheet HTML 1Page - STMicroelectronics STP36NF03L Datasheet HTML 2Page - STMicroelectronics STP36NF03L Datasheet HTML 3Page - STMicroelectronics STP36NF03L Datasheet HTML 4Page - STMicroelectronics STP36NF03L Datasheet HTML 5Page - STMicroelectronics STP36NF03L Datasheet HTML 6Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =15 V
ID =18 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 3)
16
200
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =24 V ID =32 A VGS =10 V
18
3
5
21
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay T ime
Fall T ime
VDD =15 V
ID =18 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 3)
35
40
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
VSD (
∗)Forward On Voltage
ISD =36 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 36 A
di/dt = 100 A/
µs
VDD =15 V
Tj =150
oC
(see t est circuit, f ig. 5)
38
30
1.6
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STP36NF03L
3/6



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