STP38N06 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on T ime

Rise Time

VDD =30 V

ID =19 A

RG =50

Ω

VGS =10 V

(see t est circuit, figure 3)

280

380

(di/ dt)on

Turn-on Current Slope

VDD =48 V

ID =38 A

RG =50

Ω

VGS =10 V

(see t est circuit, figure 5)

240

µs

Qgs

Qgd

Total Gat e Charge

Gate-Source Charge

Gate-Drain Charge

VDD =40 V

ID =38 A

VGS =10 V

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

Of f-voltage Rise Time

Fall T ime

Cross-over T ime

VDD =48 V

ID =38 A

RG =50

Ω VGS =10 V

(see t est circuit, figure 5)

140

230

180

300

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

152

VSD (

∗)Forward On Voltage

ISD =38 A

VGS =0

1.5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 38 A

di/ dt = 100 A/

µs

VDD =40 V

Tj = 150

(see t est circuit, figure 5)

0.3

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

Safe Operating Area

Thermal Impedance

STP38N06

3/11

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