STP3N100 datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

THERMAL DATA

TO-220

ISOWATT220

Rthj-case

Thermal Resist ance Junct ion-case

Max

1.25

3. 12

oC/W

Rthj-amb

Rthc- sink

Thermal Resist ance Junct ion-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Uni t

IAR

Avalanche Current

(repetit ive or not-repetitive, T j =25

oC)

3.5

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =25 V)

130

EAR

Repet itive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

6mJ

IAR

Avalanche Current

(repetit ive or not-repetitive, T j =100

oC)

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS = 0

1000

IDS S

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

250

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =250

µA2

RDS(on)

St atic Drain-source On

Resist ance

VGS =10V

ID =1.5 A

Ω

ID(on)

On St ate Drain Current

VDS >ID(on) xRD S(on)max

VGS =10 V

3.5

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs

Forward

Transconductance

VDS >ID(on) xRD S(on)max

ID =1.5 A

1.8

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS =0

750

950

110

STP3N100/FI

2/10

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