STP3NB80 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP3NB80

功能描述	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP3NB80

STP3NB80FP

N - CHANNEL 800V - 4.6

Ω - 2.6A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 4.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY(UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP3NB80

STP3NB80F P

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC2.6

2.6 (

••)A

ID

Drain Current (continuous) at Tc =100

oC1.6

1.6 (

••)

A

IDM (

•)

Drain Current (pulsed)

10.4

A

Ptot

T otal Dissipation at Tc =25

oC90

35

W

Derating Factor

0.72

0.28

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope



4.5

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 2.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMA

(

••) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P3NB80

ST P3NB80FP

800 V

<6.5

Ω

<6.5

Ω

2.6 A

1/9

类似零件编号 - STP3NB80

制造商	部件名	数据表	功能描述
Suntac Electronic Corp.	STP3NB80	163Kb / 4P	POWER MOSFET
Inchange Semiconductor ...	STP3NB80	372Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP3NB80FP	2Mb / 9P	Power MOSFET
Inchange Semiconductor ...	STP3NB80FP	318Kb / 2P	isc N-Channel MOSFET Transistor

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