STP3NB90 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STP3NB90

功能描述	N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP3NB90

STP3NB90FP

N - CHANNEL 900V - 4

Ω - 3.5 A - TO-220/TO-220FP

PowerMESH

™ MOSFET

TARGET DATA

s

TYPICAL RDS(on) = 4

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

October 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP4NB90

STP4NB90FP

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

900

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

3.5

3.5(**)

A

ID

Drain Current (continuous) at Tc = 100

oC

2.2

1.26(*)

A

IDM

Drain Current (pulsed)

14

A

Ptot

Total Dissipation at Tc = 25

o C

100

35

W

Derating Factor

0.8

0.28

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(*) Pulse width limited by safe operating area

(1) ISD

≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (**) Limited only TJMAX

TYPE

VDSS

RDS(on)

ID

STP3NB90

STP3NB90FP

900 V

< 4.2

Ω

< 4.2

Ω

3.5 A

1/6

类似零件编号 - STP3NB90

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP3NB90	371Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP3NB90FP	318Kb / 2P	isc N-Channel MOSFET Transistor

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类似说明 - STP3NB90

制造商	部件名	数据表	功能描述
STMicroelectronics	STP3NB100	44Kb / 6P	N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET Oct-1998
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	STP5NB90	44Kb / 6P	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1998
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