STP3NC50 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STP3NC50

功能描述	N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh™ I MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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May 2001

STP3NC50

N-CHANNEL 500V - 3

Ω - 2.8A TO-220

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 3 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

.

TYPE

VDSS

RDS(on)

ID

STP3NC50

500 V

< 4

Ω

2.8 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

2.8

A

ID

Drain Current (continuos) at TC = 100°C

1.8

A

IDM (1)

Drain Current (pulsed)

11.2

A

PTOT

Total Dissipation at TC = 25°C

75

W

Derating Factor

0.6

W/°C

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–60 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤ 2.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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