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PM6680 数据表(PDF) 36 Page - STMicroelectronics |
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PM6680 数据表(HTML) 36 Page - STMicroelectronics |
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36 / 49 page ![]() Device description PM6680 36/49 Equation 22 Choose a synchronous rectifier with low RDSon. When high side MOSFET turns on, the fast variation of the phase node voltage can bring up even the low side gate through its gate- drain capacitance CRSS, causing cross-conduction problems. Choose a low side MOSFET that minimizes the ratio CRSS/CGS (CGS = CISS - CRSS). Below there is a list of some possible low side MOSFETs. Dual n-channel MOSFETS can be used in applications with a maximum output current of about 3 A. Below there is a list of some MOSFET manufacturers. A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage clamp across the synchronous rectifier and reduces the negative inductor swing during the dead time between turning the high-side MOSFET off and the synchronous rectifier on. It can increase the efficiency of the switching section, since it reduces the low side switch losses. A shottky diode is suitable for its low forward voltage drop (0.3 V). The diode reverse voltage must be greater than the maximum input voltage VINmax. A minimum recovery reverse charge is preferable. Below there is a list of some shottky diode manufacturers. Table 14. Low side MOSFET manufacturer Manufacturer Type RDSon (mΩ) Rated reverse voltage (V) ST STS17NF3LL 5.5 0.047 30 ST STS25NH3LL 3.5 0.011 30 Table 15. Dual MOSFET manufacturer Manufacturer Type RDSon (m Ω) Gate charge (nC) Rated reverse voltage (V) ST STS8DNH3LL 25 10 30 ST STS4DNF60L 65 32 60 Table 16. Shottky diode manufacturer Manufacturer Series Forward voltage (V) Rated reverse voltage (V) Reverse current (uA) ST STPS1L30M 0.34 30 0.00039 ST STPS1L20M 0.37 20 0.000075 2 LOAD max IN OUT DSon conduction (max) I V V 1 R P × ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − × = GS RSS C C |
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