RHFL4913

Die information

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8.1

Die bonding pad locations and electrical functions

Die physical dimensions:

Die size: 150 mils x 110 mils (3.81 mm by 2.79 mm)

Die thickness: 375 µm

± 25 µm (14.8 mils ± 1 mil)

Control pads: 184 µm x 184 µm (7.25 mils square)

Interface materials:

Top metallization: Al/Si/Cu, 1.05 µm

± 0.15 µm

Backside metallization: none

Glassivation:

Type: p. vapox + nitride

Thickness: 0.6 µm

± 0.1 µm + 0.6 µm ± 0.08 µm

Substrate: bare silicon

Assembly related information:

Substrate potential: floating recommended to be tied to ground

Special assembly instructions: "Sense" pad not used; not internally connected to

any part of the IC. Can be connected to ground when space anti-static electricity

rules apply.