1/11

January 2001

STP3NC90Z - STP3NC90ZFP

STB3NC90Z-1

N-CHANNEL 900V - 3.2

Ω - 3.5A TO-220/TO-220FP/I2PAK

Zener-Protected PowerMESH™III MOSFET

s

s

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STP3NC90Z/FP

900V

< 3.5

Ω

3.5 A

STB3NC90Z-1

900V

< 3.5

Ω

3.5 A

Symbol

Parameter

Value

Unit

STP(B)3NC90Z(-1)

STP3NC90ZFP

900

V

900

V

Gate- source Voltage

± 25

V

3.5

3.5(*)

A

2.2

2.2(*)

A

Drain Current (pulsed)

14

14

A

100

35

W

Derating Factor

0.8

0.28

W/°C

Gate-source Current (*)

±50

mA

Gate source ESD(HBM-C=100pF, R=15K

Ω)

2.5

KV

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Insulation Withstand Voltage (DC)

--

2000

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

(*).Limited only by maximum temperature allowed

TO-220

1

2

3

TO-220FP

1

2

3

I2PAK

(Tabless TO-220)