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SM6T 数据表(PDF) 4 Page - STMicroelectronics |
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SM6T 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics SM6T 4/9 Figure 4. Clamping voltage versus peak pulse current(a) Figure 2. Peak power dissipation versus initial junction temperature (printed circuit board) Figure 3. Peak pulse power versus exponential pulse duration a. The curves of Figure 4 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the formula: ΔVBR = αT * [Tamb -25] * VBR(25 °C). For intermediate voltages, extrapolate the given results. 0 0 20 40 60 80 100 % 20 40 60 80 100 120 140 160 180 200 Tj initial (° C) t = 20µs p t = 1ms t = 10ms p p Exponential waveform: |
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