SMTPA datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

SMP50 / SMTPA / TPA

4/11

Table 5.

Electrical characteristics - values (Tamb = 25°C)

Types

IRM @ VRM

IR @ VR

(1)

Dynamic

VBO

(2)

Static

VBO @ IBO

(3)

(4)

C(5)

C(6)

max.

min.

typ.

µA

SMP50-62 / TPA62

SMTPA62

800

150

SMP50-68 / TPA68

SMTPA68

SMP50-100 / TPA100

SMTPA100

100

135

133

SMP50-120 / TPA120

SMTPA120

108

120

160

SMP50-130 / TPA130

SMTPA130

117

130

173

SMP50-180 / TPA180

SMTPA180

162

180

235

240

SMP50-200 / TPA200

SMTPA200

180

200

262

267

SMP50-220 / TPA220

SMTPA220

198

220

285

293

SMP50-240 / TPA240

SMTPA240

216

240

300

320

SMP50-270 / TPA270

SMTPA270

243

270

350

360

SMP50-320 / SMTPA320

290

320

400

IR measured at VR guarantee VBR min ≥ VR

See functional test circuit 1(Figure 9.)

See test circuit 2(Figure 10.)

See functional holding current test circuit 3(Figure 11.)

VR = 50 V bias, VRMS = 1 V, F = 1 MHz

VR = 2 V bias, VRMS = 1 V, F = 1 MHz

Figure 1.

Pulse waveform (10/1000 µs)

Figure 2.

Non repetitive surge peak on-state

current versus overload duration

100

Repetitive peak pulse current

tr = rise time (µs)

tp = pulse duration time (µs)

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

F=50Hz

t(s)

(A)

TSM

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