TPA datasheet(5/11 Pages) STMICROELECTRONICS

5 / 11 page

SMP50 / SMTPA / TPA

Characteristics

5/11

Figure 3.

On-state voltage versus on-state

current (typical values)

Figure 4.

Relative variation of holding

current versus junction

temperature

234

789

V (V)

I (A)

T =25°C

-40

-20

100

120

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

T (°C)

I [T ] / I [T =25°C]

Figure 5.

Relative variation of breakover

voltage versus junction

temperature

Figure 6.

Relative variation of leakage

current versus reverse voltage

applied (typical values)

-40

-20

100

0.90

0.95

1.00

1.05

1.10

62 V

270 V

[T ] / V

[T =25°C]

T (°C)

100

125

100

1000

2000

[T ] / I

[T =25°C]

V=V

RRM

T (°C)

Figure 7.

Variation of thermal impedance

junction to ambient versus pulse

duration (Printed circuit board FR4,

SCu = 35 µm, recommended pad

layout)

Figure 8.

Relative variation of junction

capacitance versus reverse voltage

applied (typical values)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-1

1E+0

1E+1

1E+2

(°C/W)

th(j-a)

SMTPA / TPA

SMP50

t (s)

100

300

0.0

0.5

1.0

1.5

2.0

2.5

V (V)

C[V ] / C[V =50V]

T =25°C

F=1MHz

=1V

RMS

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