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SMP100LC 数据表(PDF) 4 Page - STMicroelectronics

部件名 SMP100LC
功能描述  Trisil for telecom equipment protection
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SMP100LC 数据表(HTML) 4 Page - STMicroelectronics

  SMP100LC Datasheet HTML 1Page - STMicroelectronics SMP100LC Datasheet HTML 2Page - STMicroelectronics SMP100LC Datasheet HTML 3Page - STMicroelectronics SMP100LC Datasheet HTML 4Page - STMicroelectronics SMP100LC Datasheet HTML 5Page - STMicroelectronics SMP100LC Datasheet HTML 6Page - STMicroelectronics SMP100LC Datasheet HTML 7Page - STMicroelectronics SMP100LC Datasheet HTML 8Page - STMicroelectronics SMP100LC Datasheet HTML 9Page - STMicroelectronics Next Button
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Characteristics
SMP100LC
4/12
Figure 1.
Pulse waveform
Figure 2.
Non repetitive surge peak on-state
current versus overload duration
100
50
%IPP
tr
tp
0
t
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
I
(A)
TSM
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
10
20
30
40
50
60
70
F=50Hz
T initial = 25°C
j
t(s)
Figure 3.
On-state voltage versus on-state
current (typical values)
Figure 4.
Relative variation of holding
current versus junction
temperature
10
100
01
2345
678
V (V)
T
I (A)
T
T initial = 25°C
j
I [T ] / I [T =25°C]
HH
jj
-25
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
Figure 5.
Relative variation of breakover
voltage versus junction
temperature
Figure 6.
Relative variation of leakage
current versus junction
temperature (typical values)
-25
0
25
50
75
100
125
0.96
0.98
1.00
1.02
1.04
1.06
1.08
V
[ ] / V
[ =25°C]
BO
BO
TT
jj
T (°C)
j
I [ ] / I [ =25°C]
RR
TT
jj
25
50
75
100
125
1
10
100
1000
2000
T (°C)
j



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