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STP45NF06 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP45NF06
功能描述  N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET™ POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP45NF06 数据表(HTML) 3 Page - STMicroelectronics

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STP45NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 30V, ID = 19A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
100
ns
Qg
Total Gate Charge
VDD = 48V, ID = 38A,
VGS = 10V
43
58
nC
Qgs
Gate-Source Charge
9
nC
Qgd
Gate-Drain Charge
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off-Delay Time
VDD = 30V, ID = 19A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
50
ns
tf
Fall Time
20
ns
td(off)
Off-voltage Rise Time
Vclamp =48V, ID =38A
RG =4.7Ω, VGS = 10V
45
ns
tf
Fall Time
(see test circuit, Figure 5)
42
ns
tc
Cross-over Time
60
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
38
A
ISDM (1)
Source-drain Current (pulsed)
152
A
VSD (2)
Forward On Voltage
ISD = 38A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 38A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
95
ns
Qrr
Reverse Recovery Charge
260
nC
IRRM
Reverse Recovery Current
5.5
A



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