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November 2002

STP45NF3LL - STP45NF3LLFP

STB45NF3LL

N-CHANNEL 30V - 0.014

STripFET II™ POWER MOSFET

s

s

OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

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ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique

“Single Feature Size

resulting transistor shows the best trade-off be-

tween on-resistance ang gate charge. When used

as high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STP45NF3LL

STP45NF3LLFP

STB45NF3LL

30 V

30 V

30 V

<0.018

Ω

<0.018

Ω

<0.018

Ω

45 A

45 A

27 A

Symbol

Parameter

Value

Unit

TO-220FP

30

V

30

V

Gate- source Voltage

± 16

V

45

27

A

32

19

A

Drain Current (pulsed)

180

108

A

70

25

W

Derating Factor

0.46

0.167

W/°C

Single Pulse Avalanche Energy

241

mJ

Viso

Insulation Withstand Voltage (DC)

--

2500

V

Storage Temperature

–55 to175

°C

Max. Operating Junction Temperature

1

3

1

2

3

TO-220

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM