STP4N20 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-case

Rthj -amb

Rthc-sink

T l

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature F or Soldering Purpose

2.08

62.5

0.5

300

oC/W

oC/ W

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

150

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS = 0

200

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc = 125

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID = 250

µA

234

RDS(on)

Static Drain-source On

Resistance

VGS =10V

ID =30 A

1.3

1. 5

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID =2 A

0. 8

1.3

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

290

STP4N20

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