STP4NA40 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP4NA40

功能描述	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP4NA40

STP4NA40FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 1.7

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE GHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The

optimized

cell

layout

coupled

with

a

new

proprietary edge termination concur to give the

device low RDS(on) and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STP4NA40

STP4NA40FI

400 V

<2

Ω

<2

Ω

4A

2.8 A

1

2

3

TO-220

ISOWATT220

November 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

STP4NA40

STP4NA40FI

VDS

Drain-source Voltage (VGS =0)

400

V

VDG R

Drain-gate Volt age (RGS =20 k

Ω)400

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at T c =25

oC4

2.8

A

ID

Drain Current (cont inuous) at T c =100

oC2.5

1.7

A

IDM(

•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at Tc =25

oC80

40

W

Derating Factor

0. 64

0.32

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/10

类似零件编号 - STP4NA40

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Inchange Semiconductor ...	STP4NA40	371Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP4NA40FI	318Kb / 2P	isc N-Channel MOSFET Transistor

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