STP4NA60FP datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STP4NA60FP

功能描述	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP4NA60FP

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.85

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents

the most advanced high voltage technology.

The optmized cell layout coupled with a new

proprietary edge termination concur to give

the device low

RDS(on) and gate charge,

unequalled

ruggedness

and

superior

switching performance.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Unit

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC2.7

A

ID

Drain Current (continuous) at Tc =100

oC1.8

A

IDM(

•)

Drain Current (pulsed)

17.2

A

Ptot

Total Dissipation at Tc =25

oC35

W

Derat ing Factor

0.28

W/

oC

VISO

Insulation W it hst and Volt age (DC)

2000

V

Tstg

St orage Temperature

-65 t o 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP4NA60FP

600 V

< 2.2

Ω

2.7 A

October 1997

1

2

3

TO-220FP

1/5

类似零件编号 - STP4NA60FP

制造商	部件名	数据表	功能描述
STMicroelectronics	STP4NA60FI	203Kb / 10P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Nov-1996
VBsemi Electronics Co.,...	STP4NA60FI	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
Inchange Semiconductor ...	STP4NA60FI	318Kb / 2P	isc N-Channel MOSFET Transistor

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