STP4NB100FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP4NB100FP

功能描述	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP4NB100

STP4NB100FP

N - CHANNEL 1000V - 4

Ω - 3.8A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) =4

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP4NB100

ST P4NB100F P

VDS

Drain-source Voltage (VGS =0)

1000

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

1000

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC

3.8

3.8(*)

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

2.4(*)

A

IDM (

•)

Drain Current (pulsed)

15.2

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating F actor

1

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction T emperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 3.8A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P4NB100

ST P4NB100FP

1000 V

<4.4

Ω

<4.4

Ω

3.8 A

1/9

类似零件编号 - STP4NB100FP

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Inchange Semiconductor ...	STP4NB100FP	318Kb / 2P	isc N-Channel MOSFET Transistor

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