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STP4NB50FP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP4NB50FP
功能描述  N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP4NB50FP 数据表(HTML) 2 Page - STMicroelectronics

  STP4NB50FP Datasheet HTML 1Page - STMicroelectronics STP4NB50FP Datasheet HTML 2Page - STMicroelectronics STP4NB50FP Datasheet HTML 3Page - STMicroelectronics STP4NB50FP Datasheet HTML 4Page - STMicroelectronics STP4NB50FP Datasheet HTML 5Page - STMicroelectronics STP4NB50FP Datasheet HTML 6Page - STMicroelectronics STP4NB50FP Datasheet HTML 7Page - STMicroelectronics  
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STP4NB50 - STP4NB50FP
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.56
3.57
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
220
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 1.9 A
2.5
2.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 1.9 A
2.3
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
400
pF
Coss
Output Capacitance
62
pF
Crss
Reverse Transfer
Capacitance
7.5
pF



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