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STP4NB80FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP4NB80FP
功能描述  N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP4NB80FP 数据表(HTML) 3 Page - STMicroelectronics

  STP4NB80FP Datasheet HTML 1Page - STMicroelectronics STP4NB80FP Datasheet HTML 2Page - STMicroelectronics STP4NB80FP Datasheet HTML 3Page - STMicroelectronics STP4NB80FP Datasheet HTML 4Page - STMicroelectronics STP4NB80FP Datasheet HTML 5Page - STMicroelectronics STP4NB80FP Datasheet HTML 6Page - STMicroelectronics STP4NB80FP Datasheet HTML 7Page - STMicroelectronics STP4NB80FP Datasheet HTML 8Page - STMicroelectronics STP4NB80FP Datasheet HTML 9Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay Time
Rise Time
VDD = 400 V
ID = 2 A
RG = 4.7
Ω
VGS = 10 V
14
8
20
12
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V
ID = 4 A VGS = 10 V
21
7
9
29
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640V
ID = 4 A
RG = 4.7
Ω VGS = 10 V
12
9
16
17
13
22
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
4
16
A
A
VSD (
∗)
Forward On Voltage
ISD =4 A
VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A
di/dt = 100 A/
µs
VDD = 100 V
Tj = 150
o C
600
3.3
11
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP4NB80/FP
3/9



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