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STP50N06 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP50N06
功能描述  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP50N06 数据表(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =25 V
ID =25 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 3)
50
110
70
160
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =40 V
ID =50 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 5)
460
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =50 A
VGS =10 V
50
14
25
70
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =40 V
ID =50 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 5)
55
50
110
80
70
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD (
∗)
Forward On Volt age
ISD =50 A
VGS =0
2
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 50 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
(see test circuit, figure 5)
150
0.45
6
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP50N06/FI
3/10



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