STP50NE10L datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STP50NE10L

功能描述	N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP50NE10L

N - CHANNEL 100V - 0.020

Ω - 50A TO-220

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.020

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based

process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

May 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC50

A

ID

Drain Current (continuous) at Tc =100

oC35

A

IDM (

•)

Drain Current (pulsed)

200

A

Ptot

T otal Dissipat ion at Tc =25

oC

150

W

Derating Factor

1

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 50 A, di/dt ≤ 275 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP50NE10L

100 V

<0.025

Ω

50 A

1

2

3

TO-220

1/8

类似零件编号 - STP50NE10L

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