STP55NE06 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP55NE06

功能描述	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP55NE06

STP55NE06FP

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE

™ ” POWER MOSFET

s

TYPICAL RDS(on) = 0.019

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

HIGH dv/dt CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STP55NE06

STP55NE06FP

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C55

30

A

ID

Drain Current (continuous) at Tc =100

oC39

21

A

IDM(

•)

Drain Current (pulsed)

220

A

Ptot

Tot al Dissipation at Tc =25

oC130

35

W

Derating F act or

0.96

0. 27

W/

oC

VISO

Insulat ion Withstand Volt age (DC)



2000

V

dv/dt

Peak Diode Recovery voltage slope

7

V/ ns

Tstg

Storage T emperat ure

-65 to 175

oC

Tj

Max. O perating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P55NE06

ST P55NE06FP

60 V

<0.022

Ω

<0.022

Ω

55 A

30 A

January 1998

TO-220

TO-220FP

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类似零件编号 - STP55NE06

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STP55NE06	1Mb / 9P	N-Channel 60 V (D-S) MOSFET
Inchange Semiconductor ...	STP55NE06	371Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP55NE06FP	950Kb / 7P	N-Channel 60-V (D-S) MOSFET
Inchange Semiconductor ...	STP55NE06FP	318Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP55NE06L	57Kb / 6P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997

More results

类似说明 - STP55NE06

制造商	部件名	数据表	功能描述
STMicroelectronics	STB55NE06	98Kb / 8P	N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET Dec-1997
	STB60NE06-16	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Jan-1998
	STB80NE06-10	94Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998
	STD20NE03L	105Kb / 9P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Dec-1997
	STD20NE06	96Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Jan-1998
	STP16NE06L	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET Oct-1997
	STP55NE06L	57Kb / 6P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP60NE03L-10	99Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP80NE03L-06	87Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-2000
	STP80NE06-10	92Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998

More results

STP55NE06 数据表(PDF) 1 Page - STMicroelectronics

STP55NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP55NE06

类似说明 - STP55NE06

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链接网址

STP55NE06 数据表(PDF) 1 Page - STMicroelectronics

STP55NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP55NE06

类似说明 - STP55NE06

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数据表 下载

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数据表下载