STP55NF06LFP datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STP55NF06LFP

功能描述	N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET™ I POWER MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 12 page

1/12

August 2002

STP55NF06L - STP55NF06LFP

STB55NF06L - STB55NF06L-1

N-CHANNEL 60V - 0.014

Ω - 55A TO-220/FP/D2PAK/I2PAK

STripFET™II POWER MOSFET

(1) Starting Tj=25°C, ID=27.5A, VDD=30V

(2) ISD ≤ 55 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 0.014Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

“Single

Feature

Size

™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP55NF06L

STP55NF06LFP

STB55NF06L

STB55NF06L-1

60 V

<0.018

Ω

<0.018

Ω

<0.018

Ω

<0.018

Ω

55 A

Symbol

Parameter

Value

Unit

STP55NF06L

STB55NF06L/-1

STP55NF06LFP

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C

55

30

A

ID

Drain Current (continuous) at TC = 100°C

39

21

A

IDM (l)

Drain Current (pulsed)

220

120

A

PTOT

Total Dissipation at TC = 25°C

95

30

W

Derating Factor

0.63

0.2

W/°C

dv/dt (2)

Peak Diode Recovery voltage slope

20

V/ns

EAS (1)

Single Pulse Avalanche Energy

300

mJ

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

– 55 to 175

°C

Tj

Max. Operating Junction Temperature

TO-220

1

2

3

1

2

3

TO-220FP

1

3

1

2

3

I2PAK

D2PAK

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STP55NF06LFP

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP55NF06LFP	318Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP55NF06LFP

制造商	部件名	数据表	功能描述
STMicroelectronics	STB60NE06L-16	85Kb / 8P	N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET May-2000
	STB60NF06	425Kb / 9P	N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET Feb-2001
	STP55NF03L	338Kb / 8P	N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET™II POWER MOSFET February 2001
	STP60NE06L-16	106Kb / 9P	N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET May-2000
	STP60NF06FP	330Kb / 9P	N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET™ POWER MOSFET Jan-2002
	STB55NF03L-1	338Kb / 11P	N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET Mar-2002
	STB80NF55-06	533Kb / 7P	N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET Oct-1999
	STB55NF06	543Kb / 18P	N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 26-Jun-2006
	STP55NF06L	337Kb / 15P	N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET 27-Nov-2006
	STB80NF55-06	449Kb / 17P	N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET 24-Oct-2006