STP5NB100

STP5NB100FP

N - CHANNEL 1000V - 2.4

Ω - 5A - TO-220/TO-220FP

PowerMESH

™ MOSFET

ν

Ω

ν

EXTREMELY HIGH dv/dt CAPABILITY

ν

100% AVALANCHE TESTED

ν

VERY LOW INTRINSIC CAPACITANCES

ν

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

ν

HIGH CURRENT, HIGH SPEED SWITCHING

ν

SWITCH MODE POWER SUPPLIES (SMPS)

ν

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

February 2000

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

ST P5NB100

STP5NB100FP

1000

V

Ω)

1000

V

G ate-source Voltage

± 30

V

5

5(*)

A

3.1

3.1(*)

A

•)

Drain Current (pulsed)

15.2

15. 2

A

135

40

W

Derat ing Factor

1.08

0.32

W/

Peak Diode Recovery voltage slope

4.5

4.5

V/ ns

I nsulat ion W ithst and Voltage (DC)



2000

V

Storage Temperature

-65 to 150

Max. Operat ing Junction Temperature

150

(

•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

T YPE

STP5NB100

STP5NB100F P

1000 V

1000 V

<2.7

Ω

<2.7

Ω

5A

5A

1/9