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STP5NB80FP 数据表(PDF) 1 Page - STMicroelectronics |
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STP5NB80FP 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8 Ω - 5A - TO-220/TO-220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.8 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM January 1999 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit STP5NB80 STP5NB80F P VDS Drain-source Voltage (VGS =0) 800 V VDGR Drain- gat e Voltage (RGS =20 k Ω) 800 V VGS G ate-source Voltage ± 30 V ID Drain Current (cont inuous) at Tc =25 o C5 5(*) A ID Drain Current (cont inuous) at Tc = 100 oC 3.2 3. 2(*) A IDM( •) Drain Current (pulsed) 20 20 A Ptot T otal Dissipation at Tc =25 oC 110 40 W Derating F act or 0.88 0.32 W / oC dv/dt (1) Peak Diode Recovery voltage slope 4 4 V/ns VISO I nsulation Wit hstand Voltage (DC) 2000 V Tstg Storage T emperature -65 to 150 oC Tj Max. Operating Junction T emperature 150 oC (*) Limited only by maximum temperature allowed ( 1)ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P5NB80 ST P5NB80FP 800 V 800 V <2.2 Ω <2.2 Ω 5A 5A 1/9 |
类似零件编号 - STP5NB80FP |
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类似说明 - STP5NB80FP |
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