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December 2002

STP5NC70Z - STP5NC70ZFP

STB5NC70Z - STB5NC70Z-1

N-CHANNEL 700V - 1.8

Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

s

s

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(1)Pulse width limited by safe operating area

TYPE

STP5NC70Z/FP

700V

< 2

Ω

4.6 A

STB5NC70Z/-1

700V

< 2

Ω

4.6 A

Symbol

Parameter

Value

Unit

STP(B)5NC70Z(-1)

STP5NC70ZFP

700

V

700

V

Gate- source Voltage

± 25

V

4.6

4.6(*)

A

2.9

2.9(*)

A

Drain Current (pulsed)

18.4

18.4

A

100

35

W

Derating Factor

0.8

0.32

W/°C

Gate-source Current

± 50

mA

Gate source ESD(HBM-C=100pF, R=15K

Ω)

3KV

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Insulation Winthstand Voltage (DC)

--

2000

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

TO-220FP

1

2

3

I²PAK

(Tabless TO-220)

1

3

D²PAK

INTERNAL SCHEMATIC DIAGRAM