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AAT8660C 数据表(PDF) 5 Page - Advanced Analog Technology, Inc.

部件名 AAT8660C
功能描述  ONE-CELL LI-ION BATTERY PROTECTION IC
PDF  25 Pages
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制造商  AAT [Advanced Analog Technology, Inc.]
网页  http://www.aatech.com.tw
标志 AAT - Advanced Analog Technology, Inc.

AAT8660C 数据表(HTML) 5 Page - Advanced Analog Technology, Inc.

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Advanced Analog Technology, Inc.
–
台灣類比科技股份有限公司 –
–
Advanced Analog Technology, Inc. –
Page 5 of 25
V2.0
AAT8660 Series
AAT8660B DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Over Charge Threshold Voltage
1
C
V
Detect Rising Edge of Supply
Voltage
4.300
4.350
4.400
V
Over Charge Release Voltage
2
C
V
Detect Falling Edge of Supply
Voltage
VC1-0.30 VC1-0.20 VC1-0.10
V
Over Discharge Threshold
Voltage
1
D
V
Detect Falling Edge of Supply
Voltage
2.220
2.300
2.380
V
Over Discharge Release Voltage
2
D
V
Detect Rising Edge of Supply
Voltage
VD1+0.6 VD1+0.7 VD1+0.8
V
Over Charge Delay Time
1
C
t
V
6
.
3
V
DD =
to 4.5V
0.088
0.125
0.163
s
Over Discharge Delay Time
1
D
t
V
6
.
3
V
DD =
to 2.2V
22.4
32.0
41.6
ms
Over Current Level 1 Detection
Voltage
1
OC
V
Detect Rising Edge of “VN” Pin
Voltage (
out
D
Response with tOC1
Delay Time)
130
150
170
mV
Over Current Level 2 Detection
Voltage
2
OC
V
Detect Rising Edge of “VN”
Pin Voltage (
out
D
Response
with tOC2 Delay Time)
400
500
600
mV
Short Circuit Detection Voltage
short
V
V
0
.
3
V
DD =
, Detect Rising Edge
of “VN” Pin Voltage (
out
D
Response with
short
t
Delay
Time)
7
.
1
V
DD −
3
.
1
V
DD −
9
.
0
V
DD −
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
.
3
V
DD =
2.8
4.0
5.2
ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
⇒
Low or High Temp.
⇒
V
0
.
3
V
DD =
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
.
3
V
DD =
10
50
s
μ
Charger Detection Voltage
CHR
V
Detect Rising Edge of “
out
D
”
Pin Voltage
(when VD1＜VDD＜VD2)
0
.
2
−
3
.
1
−
6
.
0
−
V
out
C
High Level Resistance
COH
R
V
5
.
3
V
DD =
;
V
0
.
3
C
OUT =
;
V
0
VN
=
1
2
10
Ω
k
out
C
Low Level Resistance
COL
R
V
5
.
4
V
DD =
;
V
5
.
0
C
OUT =
;
V
0
VN
=
150
602
2,380
Ω
k
out
D
High Level Resistance
DOH
R
V
5
.
3
V
DD =
;
V
0
.
3
D
out =
;
V
0
VN
=
2.5
5.0
10.0
Ω
k
out
D
Low Level Resistance
DOL
R
V
8
.
1
V
DD =
;
V
5
.
0
D
out =
;
V
8
.
1
VN
=
2.5
5.0
10.0
Ω
k
Internal Resistance between VN
and
DD
V
VND
R
V
8
.
1
V
DD =
;
V
0
VN
=
100
300
900
Ω
k
Internal Resistance between VN
and GND
VNG
R
V
5
.
3
V
DD =
;
V
5
.
3
VN
=
10
20
40
Ω
k



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