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STP6NA80 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP6NA80
功能描述  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP6NA80 数据表(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-220
ISOWATT220
Rthj-case
Thermal Resist ance Junct ion-case
Max
1
2. 78
oC/W
Rthj-amb
Rthc- sink
Tl
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
5.7
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =50 V)
165
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
6.5
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max,
δ <1%)
3.6
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
800
V
IDS S
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
25
250
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA
2. 25
3
3. 75
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =10V
ID =3 A
1.68
1.9
Ω
ID(on)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
6A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =3 A
4
6.1
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1330
160
40
1750
210
55
pF
pF
pF
STP6NA80/FI
2/10



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