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STP6NB25 数据表(PDF) 1 Page - STMicroelectronics |
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STP6NB25 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() 1/9 Jun 2000 STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9 Ω - 6A TO-220/TO-220FP PowerMesh ™ MOSFET s TYPICAL RDS(on) = 0.9 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS ( •)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP6NB25 250 V < 1.1 Ω 6A STP6NB25FP 250 V < 1.1 Ω 3.7 A Symbol Parameter Value Unit STP6NB25 STP6NB25FP VDS Drain-source Voltage (VGS =0) 250 V VDGR Drain-gate Voltage (RGS =20 kΩ) 250 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC =25°C 6 3.7 A ID Drain Current (continuos) at TC = 100°C 3.8 2.3 A IDM (q) Drain Current (pulsed) 24 24 A PTOT Total Dissipation at TC =25°C 75 30 W Derating Factor 0.6 0.24 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns VISO Insulation Withstand Voltage (DC) - 2000 Tstg Storage Temperature –60 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM 1 2 3 1 2 3 TO-220 TO-220FP |
类似零件编号 - STP6NB25 |
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类似说明 - STP6NB25 |
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