STP6NB50FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP6NB50FP

功能描述	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP6NB50

STP6NB50FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.35

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

March 1998

TO-220

TO-220FP

1

2

3

1

2

3

TYPE

VDSS

RDS(on)

ID

STP6NB50

STP6NB50FP

500 V

<1.5

Ω

<1.5

Ω

5.8 A

3.4 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STP6NB50

STP6NB50FP

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C5.8

3.4

A

ID

Drain Current (continuous) at Tc =100

oC3.7

2.1

A

IDM(

•)

Drain Current (pulsed)

23.2

23. 2

A

Ptot

Tot al Dissipation at Tc =25

oC100

35

W

Derating F act or

0.8

0. 28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ ns

VISO

Insulat ion Withstand Volt age (DC)

--

2000

oC

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

1/9

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