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STP6NB80 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP6NB80
功能描述  N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP6NB80 数据表(HTML) 2 Page - STMicroelectronics

  STP6NB80 Datasheet HTML 1Page - STMicroelectronics STP6NB80 Datasheet HTML 2Page - STMicroelectronics STP6NB80 Datasheet HTML 3Page - STMicroelectronics STP6NB80 Datasheet HTML 4Page - STMicroelectronics STP6NB80 Datasheet HTML 5Page - STMicroelectronics STP6NB80 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
TO-220
TO220-FP
Rthj-case
Thermal Resistance Junction-case
Max
1.0
3.1
oC/W
Rthj-amb
Rthc-sink
T l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead T emperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current , Repet itive or Not -Repetit ive
(pulse widt h limited by Tj max)
5.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
314
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
800
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS ID = 250
µA
345
V
RDS(on)
Static Drain-source On
Resist ance
VGS =10V
ID =3 A
1.6
1. 9
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
5. 7
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =3 A
2. 5
4.5
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1250
145
16
1625
190
21
pF
pF
pF
STP6NB80/FP
2/6



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