STP6NB90 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP6NB90

功能描述	N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP6NB90

STP6NB90FP

N - CHANNEL 900V - 1.7

Ω - 5.8A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.7

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

June 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP6NB90

STP6NB90F P

VDS

Drain-source Voltage (VGS =0)

900

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

900

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5.8

5.8(*)

A

ID

Drain Current (continuous) at Tc =100

oC3.6

3.6(*)

A

IDM (

•)

Drain Current (pulsed)

23

A

Ptot

T otal Dissipation at Tc =25

oC

135

40

W

Derating Factor

0.92

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 6Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P6NB90

ST P6NB90FP

900 V

<2

Ω

<2

Ω

5.8 A

1/9

类似零件编号 - STP6NB90

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP6NB90	372Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP6NB90FP	319Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP6NB90

制造商	部件名	数据表	功能描述
STMicroelectronics	STB6NB90	48Kb / 5P	N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET Feb-1999
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP3NB90	85Kb / 6P	N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET Oct-1998
	STP3NC90Z	335Kb / 11P	N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ II MOSFET Jan-2001
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP5NB90	44Kb / 6P	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1998
	STP6LNC60FP	324Kb / 9P	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh™ II MOSFET Oct-2001
	STW6NB90	51Kb / 5P	N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET Feb-1999
	STP5NK90Z	342Kb / 12P	N-CHANNEL 900V - 2ohm - 4.5A TO-220/TO-220FP 06-Sep-2005
	STP6NK90Z	483Kb / 18P	N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET 10-Apr-2007