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STP7NB60 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP7NB60
功能描述  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP7NB60 数据表(HTML) 3 Page - STMicroelectronics

  STP7NB60 Datasheet HTML 1Page - STMicroelectronics STP7NB60 Datasheet HTML 2Page - STMicroelectronics STP7NB60 Datasheet HTML 3Page - STMicroelectronics STP7NB60 Datasheet HTML 4Page - STMicroelectronics STP7NB60 Datasheet HTML 5Page - STMicroelectronics STP7NB60 Datasheet HTML 6Page - STMicroelectronics STP7NB60 Datasheet HTML 7Page - STMicroelectronics STP7NB60 Datasheet HTML 8Page - STMicroelectronics STP7NB60 Datasheet HTML 9Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =300 V
ID =3.6 A
RG =4.7
Ω
VGS =10 V
(see t est circuit, f igure 3)
18
8
27
12
ns
ns
Qg
Qgs
Qgd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =480 V
ID =7.2 A VGS =10 V
30
9.9
13. 3
45
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over T ime
VDD =480 V
ID =7.2 A
RG =4.7
Ω VGS =10 V
(see t est circuit, f igure 5)
8
5
15
12
8
23
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
7.2
28.8
A
A
VSD (
∗)
Forward O n Volt age
ISD =7. 2 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7.2 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
o C
(see t est circuit, f igure 5)
530
4.5
17
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP7NB60/FP
3/9



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