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STP7NB60FP 数据表(PDF) 1 Page - STMicroelectronics |
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STP7NB60FP 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM March 1998 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t ST P7NB60 STP7NB60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Volt age (RGS =20 k Ω) 600 V VGS Gat e-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC7.2 4.1 A ID Drain Current (continuous) at Tc =100 oC4.5 2.6 A IDM( •) Drain Current (pulsed) 28.8 28.8 A Ptot Tot al Dissipation at Tc =25 o C 125 40 W Derating Factor 1.0 0. 32 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ ns VISO Insulation W it hstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. O perat ing Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP7NB60 STP7NB60F P 600 V 600 V <1.2 Ω <1.2 Ω 7.2 A 4.1 A 1/9 |
类似零件编号 - STP7NB60FP |
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类似说明 - STP7NB60FP |
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