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STP7NE10 数据表(PDF) 3 Page - STMicroelectronics |
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STP7NE10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 50 V ID = 3.5 A RG = 4.7 Ω VGS = 5 V 6.5 15 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 80 V ID = 5 A VGS = 5 V 14 6 4 18 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 3.5A RG = 4.7 Ω VGS = 10 V 25 7 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD=80V ID=7A RG = 4.7 Ω VGS = 10 V 7 8 16 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 7 28 A A VSD ( ∗) Forward On Voltage ISD = 8 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A di/dt = 100 A/ µs VDD = 50 V Tj = 150 oC 75 210 5.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area ® STP7NE10 3/5 |
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