STP80NF10 datasheet(2/9 Pages) STMICROELECTRONICS

部件名	STP80NF10

功能描述	N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET™ I POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 9 page

STP80NF10/STP80NF10FP

2/9

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.5

3.33

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 40 A

0.012

0.015

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =25V , ID =40 A

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

4300

Coss

Output Capacitance

600

Crss

Reverse Transfer

Capacitance

230

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