STP80NF75L datasheet(1/11 Pages) STMICROELECTRONICS

部件名	STP80NF75L

功能描述	N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

PDF	11 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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November 2001

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STP80NF75L

STB80NF75L STB80NF75L-1

N-CHANNEL 75V - 0.008

Ω - 80A TO-220/D2PAK/I2PAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.008 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

TYPE

VDSS

RDS(on)

ID

STP80NF75L

STB80NF75L

STB80NF75L-1

75 V

<0.01

Ω

<0.01

Ω

<0.01

Ω

80 A

1

2

3

TO-220

1

3

D2PAK

TO-263

I2PAK

TO-262

1

2

3

ABSOLUTE MAXIMUM RATINGS

(

•)Current Limited by Package

(

••) Pulse width limited by safe operating area.

(1) ISD ≤80A, di/dt ≤960A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

75

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

75

V

VGS

Gate- source Voltage

± 16

V

ID(•)

Drain Current (continuos) at TC = 25°C

80

A

ID

Drain Current (continuos) at TC = 100°C

80

A

IDM(••)

Drain Current (pulsed)

320

A

Ptot

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

12

V/ns

EAS (2)

Single Pulse Avalanche Energy

930

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STP80NF75L

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